Photoélectrochimie de CdIn₂S₄: caractéristiques photoélectrochimiques de CdIn₂S₄(n)/électrolyte aqueux = Photoelectrochemistry of CdIn₂S₄: photoelectrocheminal characteristics of n-CdInS₄/aqueous electrolyte systemSAVADOGO, O; YAZBECK, J; DESCHANVRES, A et al.Materials research bulletin. 1983, Vol 18, Num 12, pp 1455-1461, issn 0025-5408Article

Piezoresistance in CdIn₂S₄NAKANISHI, H; ENDO, S; IRIE, T et al.Physica status solidi. B. Basic research. 1984, Vol 124, Num 1, pp K101-104, issn 0370-1972Article

VUV Reflection spectra and fundamental optical constants of CdIn₂S₄, CdInGaS₄, Cd₃InGaS₆ single crystalsTAKIZAWA, T; OHWADA, H; KOBAYASHI, H et al.Solid state communications. 1988, Vol 67, Num 7, pp 739-743, issn 0038-1098Article

Saturation photoconductivity in CdIn₂S₄CHARBONNEAU, S; FORTIN, E; ANEDDA, A et al.Physical review. B, Condensed matter. 1985, Vol 31, Num 4, pp 2326-2329, issn 0163-1829Article

Photoconductivity of monocrystals of CdIn₂S₄VINCENT, A. B; RODRĪGUEZ, C. E; JOSHI, N. V et al.Canadian journal of physics (Print). 1984, Vol 62, Num 9, pp 883-888, issn 0008-4204Article

Photoélectrochimie de CdIn₂S₄: potentiel de bandes plates en présence d'ions sulfures = CdIn₂S₄ photoelectrochemistry: flat band voltage in presence of sulfid ionsSAVADOGO, O; YAZBECK, J; ALLAIS, G et al.Revue de chimie minérale. 1984, Vol 21, Num 3, pp 292-298, issn 0035-1032Article

Time-dependent photoconductivity in CdIn₂S₄TAKIZAWA, T; TAKEUCHI, H; KANBARA, K et al.Japanese journal of applied physics. 1988, Vol 27, Num 2, pp L234-L236, issn 0021-4922, 2Article

The contribution of exciton-phonon interaction and cation disorder to near-band-edge extrinsic absorption in II-III₂-VI₄ compoundsGEORGOBIANI, A. N; URSAKI, V. V; RADAUTSAN, S. I et al.Solid state communications. 1985, Vol 56, Num 2, pp 155-157, issn 0038-1098Article

Photoluminescence kinetics in Cr-doped CdIn₂S₄BEAUVAIS, J; FORTIN, E; KULYUK, L et al.Solid state communications. 1991, Vol 79, Num 5, pp 435-438, issn 0038-1098Article

TIME-VARYING TEMPERATURE PROFILE CVD METHODS FOR GROWING CUINS₂ AND CDIN₂S₄ CRYSTALSPAORICI C; ZANOTTI L; CURTI M et al.1982; CRYST. RES. TECHNOL. (1979); ISSN 0232-1300; DDR; DA. 1982; VOL. 17; NO 8; PP. 917-924; BIBL. 16 REF.Article

FAR-INFRARED ABSORPTION SPECTRA OF CDINALS₄ SINGLE CRYSTALSABBASOV AN; ALLAKHVERDIEV KR; ALIEV FG et al.1982; PHYSICA STATUS SOLIDI. (B). BASIC RESEARCH; ISSN 0370-1972; DDR; DA. 1982; VOL. 111; NO 2; PP. K129-K131; BIBL. 3 REF.Article

LATTICE THERMAL EXPANSION OF SPINEL CDIN₂S₄KISTAIAH P; SATYANARAYANA MURTHY K; KRISHNA RAO KV et al.1982; JOURNAL OF MATERIALS SCIENCE LETTERS; ISSN 510106; GBR; DA. 1982; VOL. 1; NO 7; PP. 285-287; BIBL. 14 REF.Article

NEGATIVE RESISTANCE IN CDIN₂S₄ SINGLE CRYSTALSSEKI Y; ENDO S; IRIE T et al.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 71; NO 2; PP. 365-370; ABS. GER; BIBL. 9 REF.Article

Isostructural phase transition in semiconductor spinel CdIn₂S₄KRAVETSKII, I. V; KULYUK, L. L; STRUMBAN, E. E et al.Soviet physics. Solid state. 1992, Vol 34, Num 9, pp 1569-1570, issn 0038-5654Article

Influence of defect generation processes in CdIn₂S₄ single crystals on the photoluminescence and Raman scattering spectraKULIKOVA, O. V; KULYUK, L. L; RADAUTSAN, S. I et al.Physica status solidi. A. Applied research. 1988, Vol 107, Num 1, pp 373-377, issn 0031-8965Article

Les deux types de centres de recombinaison lents dans CdInS4GUSEJNOV, D. T; MAMEDOV, Z. G; GASANOV, N. EH et al.Fizika i tehnika poluprovodnikov. 1987, Vol 21, Num 4, pp 738-740, issn 0015-3222Article

Time-resolved photoluminescence in CdIn₂S₄CHARBONNEAU, S; FORTIN, E; BEAUVAIS, J et al.Canadian journal of physics (Print). 1987, Vol 65, Num 3, pp 204-207, issn 0008-4204Article

Crystal Chemistry of CdIn₂S₄, MgIn₂S₄, and MnIn₂S₄ Thiospinels under High PressureSANTAMARIA-PEREZ, D; AMBOAGE, M; MANJON, F. J et al.Journal of physical chemistry. C. 2012, Vol 116, Num 26, pp 14078-14087, issn 1932-7447, 10 p.Article

Optical gain CdIn₂S₄BEAUVAIS, J; FORTIN, E.Journal of applied physics. 1987, Vol 62, Num 4, pp 1349-1351, issn 0021-8979Article

Luminescence and photoconductivity caused by antisite defects in CdIn₂S₄ single crystalsGEORGOBIANI, A. N; GRUZINTSEV, A. N; RATSEEV, S. A et al.Crystal research and technology (1979). 1986, Vol 21, Num 2, pp 259-263, issn 0232-1300Article

Investigation of photoelectronic processes in CdIn₂S₄ by photoinduced current transient spectroscopySERPI, A; TAPIERO, M; ZIELINGER, J. P et al.Physica status solidi. A. Applied research. 1986, Vol 93, Num 1, pp 241-249, issn 0031-8965Article

Pressure effect on the absorption edges of CdIn₂S₄ and related compoudsNAKANISHI, H; IRIE, T.Physica status solidi. B. Basic research. 1984, Vol 126, Num 2, pp K145-K148, issn 0370-1972Article

Structural, elastic and thermodynamic properties under pressure and temperature effects of MgIn₂S₄ and CdIn₂S₄BOUHEMADOU, A; HADDADI, K; KHENATA, R et al.Physica. B, Condensed matter. 2012, Vol 407, Num 12, pp 2295-2300, issn 0921-4526, 6 p.Article

Growth of polycrystalline CdIn₂S₄ on CdS filmsSCHUJMAN, S. B; VACCARO, P. O; SAURA, J et al.Journal of materials science letters. 1993, Vol 12, Num 8, pp 553-554, issn 0261-8028Article

Electrical and infrared optical properties of CdIn₂S₄ single crystals grown by chemical transportNEUMANN, H; KISSINGER, W; LEVY, F et al.Crystal research and technology (1979). 1989, Vol 24, Num 11, pp 1165-1169, issn 0232-1300Article